Charge-collection characteristics of GaAs heterostructure FETs fabricated with a low-temperature grown GaAs buffer layer.
| Autor: | McMorrow, D., Weatherford, T.R., Knudson, A.R., Buchner, S., Melinger, J.S., Lan Hu Tran, Campbell, A.B., Marshall, P.W., Dale, C.J., Peczalski, A., Baiers, S. |
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| Zdroj: | Proceedings of the Third European Conference on Radiation & its Effects on Components & Systems; 1996, p373-378, 6p |
| Databáze: | Complementary Index |
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