High frequency 6000 V gate GTOs with buried gate structure.

Autor: Ogura, T., Nakagawa, A., Atsuta, M., Kamei, Y., Takigami, K.
Zdroj: Proceedings of the 2nd International Symposium on Power Semiconductor Devices & Ics ISPSD '90; 1990, p252-255, 4p
Databáze: Complementary Index