High frequency 6000 V gate GTOs with buried gate structure.
Autor: | Ogura, T., Nakagawa, A., Atsuta, M., Kamei, Y., Takigami, K. |
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Zdroj: | Proceedings of the 2nd International Symposium on Power Semiconductor Devices & Ics ISPSD '90; 1990, p252-255, 4p |
Databáze: | Complementary Index |
Externí odkaz: |