Raman scattering analysis of InGaAs/InP: effect of rare earth (dysprosium) addition during liquid phase epitaxial growth.
Autor: | Tiginyanu, I.M., Ursaki, V.V., Podor, B., Csontos, L., Shontya, V.P. |
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Zdroj: | Proceedings of 8th International Conference on Indium Phosphide & Related Materials; 1996, p602-605, 4p |
Databáze: | Complementary Index |
Externí odkaz: |