Raman scattering analysis of InGaAs/InP: effect of rare earth (dysprosium) addition during liquid phase epitaxial growth.

Autor: Tiginyanu, I.M., Ursaki, V.V., Podor, B., Csontos, L., Shontya, V.P.
Zdroj: Proceedings of 8th International Conference on Indium Phosphide & Related Materials; 1996, p602-605, 4p
Databáze: Complementary Index