Process-related instability mechanisms for the hydrogenated amorphous silicon thin film transistors.
Autor: | Ya-Hsiang Tai, Su, F.C., Feng, M.S., Cheng, H.C. |
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Zdroj: | Proceedings of 4th International Conference on Solid-State & IC Technology; 1995, p730-732, 3p |
Databáze: | Complementary Index |
Externí odkaz: |