A novel Al-reflow process using surface modification by the ECR plasma treatment and its application to the 256 Mbit DRAM.
| Autor: | Park, I.S., Lee, S.I., Wee, Y.J., Jung, W.S., Choi, G.H., Park, C.S., Park, S.H., Ahn, S.T., Lee, M.Y., Kim, Y.K., Reynolds, R. |
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| Zdroj: | Proceedings of 1994 IEEE International Electron Devices Meeting; 1994, p109-112, 4p |
| Databáze: | Complementary Index |
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