Defect reductions and strain relaxation mechanisms in InP grown on patterned Si(001).

Autor: Schnabel, R.F., Grundmann, L., Krost, A., Christen, J., Heinrichsdorff, F., Bimberg, D., Cerva, H.
Zdroj: Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide & Related Materials (IPRM); 1994, p640-643, 4p
Databáze: Complementary Index