Defect reductions and strain relaxation mechanisms in InP grown on patterned Si(001).
Autor: | Schnabel, R.F., Grundmann, L., Krost, A., Christen, J., Heinrichsdorff, F., Bimberg, D., Cerva, H. |
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Zdroj: | Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide & Related Materials (IPRM); 1994, p640-643, 4p |
Databáze: | Complementary Index |
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