Growth and characterisation of high quality GaInP/AlGaInP quantum wells by solid-source molecular beam epitaxy.

Autor: Hopkinson, M., David, J.P.R., Kowalski, O.P., Mowbray, D.J., Skolnick, M.S.
Zdroj: Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide & Related Materials (IPRM); 1994, p551-554, 4p
Databáze: Complementary Index