The effect of end of range loops on transient enhanced diffusion in Si.

Autor: Jones, K.S., Moller, K., Chen, J., Puga-Lambers, M., Law, M., Simons, D.S., Chi, P., Freer, B., Bernstein, J., Rubin, L., Simonton, R., Elliman, R.G., Petravic, M., Kringhoj, P.
Zdroj: Proceedings of 11th International Conference on Ion Implantation Technology; 1996, p618-621, 4p
Databáze: Complementary Index