The effect of end of range loops on transient enhanced diffusion in Si.
Autor: | Jones, K.S., Moller, K., Chen, J., Puga-Lambers, M., Law, M., Simons, D.S., Chi, P., Freer, B., Bernstein, J., Rubin, L., Simonton, R., Elliman, R.G., Petravic, M., Kringhoj, P. |
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Zdroj: | Proceedings of 11th International Conference on Ion Implantation Technology; 1996, p618-621, 4p |
Databáze: | Complementary Index |
Externí odkaz: |