Effect of F on B penetration through gate oxide for BF/sub 2/ implants used to obtain ultra-shallow junctions by RTA.
| Autor: | Sultan, A., Craig, M., Banejee, S., List, S., Grider, T., McNeil, V. |
|---|---|
| Zdroj: | Proceedings of 11th International Conference on Ion Implantation Technology; 1996, p29-32, 4p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|