Growth and characterization of InGaN/GaN double heterostructure LEDs grown by MOCVD.

Autor: Keller, S., Keller, B.P., Wu, Y.-F., Kapolnek, D., Masui, H., Kato, M., Imagi, S., Mishra, U.K., DenBaars, S.P.
Zdroj: Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices & Circuits; 1995, p56-63, 8p
Databáze: Complementary Index