Growth and characterization of InGaN/GaN double heterostructure LEDs grown by MOCVD.
Autor: | Keller, S., Keller, B.P., Wu, Y.-F., Kapolnek, D., Masui, H., Kato, M., Imagi, S., Mishra, U.K., DenBaars, S.P. |
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Zdroj: | Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices & Circuits; 1995, p56-63, 8p |
Databáze: | Complementary Index |
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