Self-aligned gate recess technology for the fabrication of InAlAs/InGaAs HEMT structures, using InAlAs as an etch-stop layer.
| Autor: | Lauterbach, C., Albrecht, H., Beschorner, M., Gessner, R., Schier, M. |
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| Zdroj: | Proceedings 1991 Third International Conference Indium Phosphide & Related Materials; 1991, p610-613, 4p |
| Databáze: | Complementary Index |
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