Very low threshold current density (Al)GaInAs/Al(Ga)InAs laser structures grown by atmospheric pressure MOVPE.

Autor: Gessner, R., Beschorner, M., Druminski, M.
Zdroj: Proceedings 1991 Third International Conference Indium Phosphide & Related Materials; 1991, p220-223, 4p
Databáze: Complementary Index