Growth of InP/GaInAs at reduced temperature using tertiarybutyl sources, with application to InP-based heterostructure bipolar transistors.
| Autor: | McDermott, B.T., Burke, W.E., Seabury, C.W., Ho, W.J. |
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| Zdroj: | LEOS 1992 Summer Topical Meeting Digest on Broadband Analog & Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics & Smart Pixels; 1992, p144-146, 3p |
| Databáze: | Complementary Index |
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