Morphological defects in InP layers grown by gas-source molecular beam epitaxy.
| Autor: | Rakennus, K., Hakkarainen, T., Tappura, K., Asonen, H., Pessa, M. |
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| Zdroj: | LEOS 1992 Summer Topical Meeting Digest on Broadband Analog & Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics & Smart Pixels; 1992, p171-174, 4p |
| Databáze: | Complementary Index |
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