High frequency Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors.
| Autor: | Kamins, T.I., Nauka, K., Camnitz, L.H., Kruger, J.B., Turner, J.E., Rosner, S.J., Scott, M.P., Hoyt, J.L., King, C.A., Noble, D.B., Gibbons, J.F. |
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| Zdroj: | International Technical Digest on Electron Devices Meeting; 1989, p647-650, 4p |
| Databáze: | Complementary Index |
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