Room temperature operation of (Al,Ga,In)As/NiAl/(Al,Ga,In)As buried metal well hidden-field effect transistors.
| Autor: | Tabatabaie, N., Sands, T., Harbison, J.P., Gilchrist, H.L., Cheeks, T.L., Florez, L.T., Keramidas, V.G. |
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| Zdroj: | International Technical Digest on Electron Devices Meeting; 1989, p555-558, 4p |
| Databáze: | Complementary Index |
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