A new recombination model describing heavy-doping effects and low-temperature behaviour.
Autor: | Hurkx, G.A.M., Klaassen, D.B.M., Knuvers, M.P.G., O'Hara, F.G. |
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Zdroj: | International Technical Digest on Electron Devices Meeting; 1989, p307-310, 4p |
Databáze: | Complementary Index |
Externí odkaz: |