A new recombination model describing heavy-doping effects and low-temperature behaviour.

Autor: Hurkx, G.A.M., Klaassen, D.B.M., Knuvers, M.P.G., O'Hara, F.G.
Zdroj: International Technical Digest on Electron Devices Meeting; 1989, p307-310, 4p
Databáze: Complementary Index