Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing.

Autor: Shahidi, G., Davari, B., Taur, Y., Warnock, J., Wordeman, M.R., McFarland, P., Mader, S., Rodriguez, M., Assenza, R., Bronner, G., Ginsberg, B., Lii, T., Polcari, M., Ning, T.H.
Zdroj: International Technical Digest on Electron Devices; 1990, p587-590, 4p
Databáze: Complementary Index