Localized charge injection through the gate oxide over gate-drain overlap region: mechanism, device dependence, and application for device diagnostics.
| Autor: | Brozek, T., Sridharan, A., Werking, J., Chan, Y.D., Viswanathan, C.R. |
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| Zdroj: | International Electron Devices Meeting Technical Digest; 1996, p869-872, 4p |
| Databáze: | Complementary Index |
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