Progress toward 10 nm CMOS devices.
| Autor: | Timp, G., Bourdelle, K.K., Bower, J.E., Baumann, F.H., Boone, T., Cirelli, R., Evans-Lutterodt, K., Garno, J., Ghetti, A., Gossmann, H., Green, M., Jacobson, D., Kim, Y., Kleiman, R., Klemens, F., Kornlit, A., Lochstampfor, C., Mansfield, W., Moccio, S., Muller, D.A. |
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| Zdroj: | International Electron Devices Meeting 1998 Technical Digest (Cat No98CH36217); 1998, p615-618, 4p |
| Databáze: | Complementary Index |
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