Multiple gate oxide thickness for 2 GHz system-on-a-chip technologies.

Autor: Liu, C.T., Ma, Y., Oh, M., Diodato, P.W., Stiles, K.R., Mcmacken, J.R., Li, F., Chang, C.P., Cheung, K.P., Colonell, J.I., Lai, W.Y.C., Liu, R., Lloyd, E.J., Miner, J.F., Pai, C.S., Vaidya, H., Frackoviak, J., Timko, A., Klemens, F., Maynard, H.
Zdroj: International Electron Devices Meeting 1998 Technical Digest (Cat No98CH36217); 1998, p589-592, 4p
Databáze: Complementary Index