Dry etch sequencing induced gate oxide degradation due to metallic contamination in 0.25 /spl mu/m CMOS manufacturing.
| Autor: | Hughes, J., Perera, A., Hernandez, I., Sanjay Parihar, Karupanna, K., Vasek, J., Hanna, J., Nagy, A., Lii, T., Reese, M., Rose, J., Arnold, J., Cain, J., Mattay, S., Porter, J., Razumovsky, O., Chesnut, T., Kaiser, A., Poon, S. |
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| Zdroj: | International Electron Devices Meeting 1998 Technical Digest (Cat No98CH36217); 1998, p337-340, 4p |
| Databáze: | Complementary Index |
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