Control of trench sidewall stress in bias ECR-CVD oxide-filled STI for enhanced DRAM data retention time.
| Autor: | Saino, K., Okonogi, K., Horiba, S., Sakao, M., Komuro, M., Takaishi, Y., Sakoh, T., Yoshida, K., Koyama, K. |
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| Zdroj: | International Electron Devices Meeting 1998 Technical Digest (Cat No98CH36217); 1998, p149-152, 4p |
| Databáze: | Complementary Index |
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