Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors.
| Autor: | Vetury, R., Wu, Y.-F., Fini, P.T., Parish, G., Keller, S., DenBaars, S., Mishra, U.K. |
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| Zdroj: | International Electron Devices Meeting 1998 Technical Digest (Cat No98CH36217); 1998, p55-58, 4p |
| Databáze: | Complementary Index |
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