In/sub 0.52/Al/sub0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMT's on InP substrates.

Autor: Chia-Song Wu, Yi-Jen Chan, Chu-Dong Chen, Tien-Huat Gan, Jen-Inn Chyi
Zdroj: International Electron Devices & Materials Symposium; 1994, p11-11, 1p
Databáze: Complementary Index