CPM-characterization of light and current stressed a-Si:H diodes with nin, pip and pin structures.

Autor: Ostendorf, H.-C., Schwarz, R., Kusian, W., Kruhler, W.
Zdroj: Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat No93CH3283-9); 1993, p872-877, 6p
Databáze: Complementary Index