Extended cavity lasers in InGaAs-InGaAsP and InGaAlP-GaAs multi-quantum well structure using a sputtered SiO/sub 2/ technique.
| Autor: | Qiu, B.C., Hamilton, C.J., Ke, M.L., Kowalski, O.P., McDougall, S.D., Bryce, A.C., Marsh, J.H. |
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| Zdroj: | Conference Proceedings 1998 International Conference on Indium Phosphide & Related Materials (Cat No98CH36129); 1998, p635-638, 4p |
| Databáze: | Complementary Index |
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