Low noise InAlAs/InGaAs HEMTs grown by MOVPE.

Autor: Docter, D.P., Elliott, K.R., Schmitz, A.E., Kiziloglu, K., Brown, J.J., Harvey, D.S., Karatnicki, H.M.
Zdroj: Conference Proceedings 1998 International Conference on Indium Phosphide & Related Materials (Cat No98CH36129); 1998, p219-222, 4p
Databáze: Complementary Index