Low noise InAlAs/InGaAs HEMTs grown by MOVPE.
Autor: | Docter, D.P., Elliott, K.R., Schmitz, A.E., Kiziloglu, K., Brown, J.J., Harvey, D.S., Karatnicki, H.M. |
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Zdroj: | Conference Proceedings 1998 International Conference on Indium Phosphide & Related Materials (Cat No98CH36129); 1998, p219-222, 4p |
Databáze: | Complementary Index |
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