Effects of annealing on the performance of InP/lnGaAs HBTs grown by LP-MOCVD.
Autor: | Hartmann, Q.J., Fresina, M.T., Ahmari, D.A., Stockman, S.A., Baker, J.E., Barlage, D., Hwangbo, H., Yung, A., Feng, M., Stillman, G.E. |
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Zdroj: | Conference Proceedings 1997 International Conference on Indium Phosphide & Related Materials; 1997, p505-508, 4p |
Databáze: | Complementary Index |
Externí odkaz: |