Effects of annealing on the performance of InP/lnGaAs HBTs grown by LP-MOCVD.

Autor: Hartmann, Q.J., Fresina, M.T., Ahmari, D.A., Stockman, S.A., Baker, J.E., Barlage, D., Hwangbo, H., Yung, A., Feng, M., Stillman, G.E.
Zdroj: Conference Proceedings 1997 International Conference on Indium Phosphide & Related Materials; 1997, p505-508, 4p
Databáze: Complementary Index