Numerical modeling and design of Pnp InAlAs-InGaAs heterojunction bipolar transistors.

Autor:	Datta, S., Shi, S., Roenker, K.P., Cahay, M.M., Stanchina, W.E.
Zdroj:	Conference Proceedings 1997 International Conference on Indium Phosphide & Related Materials; 1997, p392-395, 4p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu