Tensile-strained single quantum well 808 nm lasers with Al-free active regions and InGaAlP cladding layers grown by solid source MBE.
| Autor: | Nabiev, R.F., Aarik, J., Asonen, H., Bournes, P., Corvini, P., Fang, F., Finander, M., Jansen, M., Nappi, J., Rakennus, K., Salokatve, A. |
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| Zdroj: | Conference Digest ISLC 1998 NARA 1998 IEEE 16th International Semiconductor Laser Conference (Cat No 98CH361130); 1998, p43-44, 2p |
| Databáze: | Complementary Index |
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