Influence of backside doping on the nonlinear capacitances of a PHEMT affecting the VCO frequency characteristics.

Autor: Brech, H., Grave, T., Werthof, A., Siweris, H.-J., Simlinger, T., Selberherr, S.
Zdroj: Compound Semiconductors 1997 Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors; 1998, p495-498, 4p
Databáze: Complementary Index