Pd/Ge-based ohmic contacts to n-InGaAs and n-GaAs for heterojunction bipolar transistors.
| Autor: | Kim, I.-H., Park, S.H., Lee, T.-W., Park, M.P., Ryum, B.R., Pyun, K.E., Park, H.-M. |
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| Zdroj: | Compound Semiconductors 1997 Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors; 1998, p455-458, 4p |
| Databáze: | Complementary Index |
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