Structural and electrical characterization of epitaxial DyP/GaAs and DyAs/GaAs grown by MBE.

Autor: Lee, P.P., Hwu, R.J., Sadwick, L.P., Balasubramaniam, H., Kumar, B.R., Lai, T.C., Chu, S.N.G., Alvis, R., Lareau, R.T., Wood, M.C.
Zdroj: Compound Semiconductors 1997 Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors; 1998, p159-162, 4p
Databáze: Complementary Index