A 0.35um BiCMOS Process with Selective Epitaxial SiGe Bipolar Transistors.
| Autor: | Kuhn, R., Decoutere, S., Caymax, M., Vleugels, F., Verschooten, E., Loo, R., Loheac, J.-L. |
|---|---|
| Zdroj: | 29th European Solid-State Device Research Conference; 1999, Issue 1, p436-439, 4p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|