Noise Characterization of InP Based Heterojunction Bipolar Transistor at Microwave Frequencies.

Autor: Danelon, V., Aniel, F., Riet, M., Crozat, P., Vernet, G., Adde, R.
Zdroj: 28th European Solid-State Device Research Conference; 1998, p408-411, 4p
Databáze: Complementary Index