Advanced self aligned SOI concepts for vertical MOS transistors with ultrashort channel lengths.
Autor: | Aeugle, Th., Risch, L., Rosner, W., Schulz, Th., Behammer, D. |
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Zdroj: | 27th European Solid-State Device Research Conference; 1997, p628-631, 4p |
Databáze: | Complementary Index |
Externí odkaz: |