0.25 um NMOS transistor with nitride spacer: reduction of the short channel effect by optimisation of the gate reoxidation process and reliablity.
| Autor: | Ada-Hanifi, M., Bonis, M., Verove, Ch., Basso, M.T., Revil, N., Haond, M., Lecontellec, M. |
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| Zdroj: | 27th European Solid-State Device Research Conference; 1997, p396-399, 4p |
| Databáze: | Complementary Index |
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