| Autor: |
McDonald, K., Weller, R. A., Pantelides, S. T., Feldman, L. C., Chung, G. Y., Tin, C. C., Williams, J. R. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 3/1/2003, Vol. 93 Issue 5, p2719, 4p, 1 Chart, 3 Graphs |
| Abstrakt: |
The relationship between nitrogen content and interface trap density (D[sub it]) in SiO[sub 2]/4H-SiC near the conduction band has been quantitatively determined. Nitridation using NO significantly reduces D[sub it] near the conduction band, but the effect saturates after ≈2.5 × 10[sup 14] cm[sup -2] of nitrogen. These results are consistent with a model of the interface in which defects such as carbon clusters or silicon suboxide states produce traps with energies corresponding to the sizes of the defects. Nitrogen passivation results in the dissolution of the defects, which then lowers the energies of the traps in the band gap. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
