Enabling shallow trench isolation for 0.1 /spl mu/m technologies and beyond.

Autor: Chang, C.-P., Shive, S.F., Kuehne, S.C., Ma, Y., Vuong, H., Baumann, F.H., Bude, M., Lloyd, E.J., Pai, C.S., Abdelgadir, M.A., Dail, R., Liu, C.T., Cheung, K.P., Colonell, J.I., Lai, W.Y.C., Miner, J.F., Vaidya, H., Liu, R.C., Clemens, J.T.
Zdroj: 1999 Symposium on VLSI Technology Digest of Technical Papers (IEEE Cat No99CH36325); 1999, p161-162, 2p
Databáze: Complementary Index