Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique.
| Autor: | Hao Guan, Li, M.F., Yaohui Zhang, Cho, B.J., Jie, B.B., Xie, J., Wang, J.L.F., Yen, A.C., Sheng, G.T.T., Zhong Dong, Weidan Li |
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| Zdroj: | 1999 IEEE International Integrated Reliability Workshop Final Report (Cat No 99TH8460); 1999, p20-23, 4p |
| Databáze: | Complementary Index |
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