Device degradation due to stud bumping above the MOSFET region and the effect of annealing on the degradation.
| Autor: | Shimoyama, N., Machida, K., Shimaya, M., Akiya, H., Kyuragi, H. |
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| Zdroj: | 1997 IEEE International Reliability Physics Symposium Proceedings 35th Annual; 1997, p118-123, 6p |
| Databáze: | Complementary Index |
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