Lateral power MOSFET low-doped drain (LDD) misalignment test structure.

Autor: Vitomirov, I.M., Seabridge, S.N., Raisanen, A.D., Tellier, T.
Zdroj: 1997 IEEE International Conference on Microelectronic Test Structures Proceedings; 1997, p31-34, 4p
Databáze: Complementary Index