Carbon doped InP/GaAsSb HBTs via MOCVD.

Autor: McDermott, B.T., Gertner, E.R., Pittman, S., Seabury, C.W., Chang, M.F.
Zdroj: 1995 53rd Annual Device Research Conference Digest; 1995, p90-91, 2p
Databáze: Complementary Index