Carbon doped InP/GaAsSb HBTs via MOCVD.
Autor: | McDermott, B.T., Gertner, E.R., Pittman, S., Seabury, C.W., Chang, M.F. |
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Zdroj: | 1995 53rd Annual Device Research Conference Digest; 1995, p90-91, 2p |
Databáze: | Complementary Index |
Externí odkaz: |
Autor: | McDermott, B.T., Gertner, E.R., Pittman, S., Seabury, C.W., Chang, M.F. |
---|---|
Zdroj: | 1995 53rd Annual Device Research Conference Digest; 1995, p90-91, 2p |
Databáze: | Complementary Index |
Externí odkaz: |