S-band 48% efficiency GaAs FET amplifier with 135 W output power for mobile communications satellite.

Autor: Ishii, K., Okamoto, T., Ishida, H., Tanibe, N., Dooi, Y., Maeda, H., Shigaki, M., Katoh, T.
Zdroj: 1994 IEEE MTT-S International Microwave Symposium Digest (Cat No94CH3389-4); 1994, p269-269, 1p
Databáze: Complementary Index