Yield improvement for a 3.5-ns BiCMOS technology in a 200-mm manufacturing line.

Autor: Chen, B., Hook, T., Starkey, G., Bhattacharyya, A., Faucher, M., Racine, C., Willets, C., Eslinger, S., Kulkarni, S., King, W., Washburn, C., Piccirillo, J., Mongeon, S., Johnson, A., Gabrielle, E.
Zdroj: 1993 International Symposium on VLSI Technology, Systems & Applications Proceedings of Technical Papers; 1993, p301-305, 5p
Databáze: Complementary Index