Device fabrication and characteristics of surface-channel PMOSFET with WSi/sub x/ polycide gate using dopant drive-out technique.
| Autor: | Yu, C.H.D., Lee, K.H., Liu, C.T., Kornblit, A., Steiner, K.G., Nagy, W.J., Molloy, S.J. |
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| Zdroj: | 1993 International Symposium on VLSI Technology, Systems & Applications Proceedings of Technical Papers; 1993, p15-19, 5p |
| Databáze: | Complementary Index |
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