Gallium arsenide metal-insulator-semiconductor field effect transistors (MISFET) with low temperature GaAs insulating layers.
| Autor: | Bozada, C.A., Dettmer, R.W., Eppers, C.L., Nakano, K., Stutz, C.E., Walline, R.E. |
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| Zdroj: | 1991 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices & Circuits; 1991, p478-487, 10p |
| Databáze: | Complementary Index |
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