High gain W-band InGaAs-InAlAs-InP HEMTs for low noise W-band applications.

Autor: Streit, D.C., Tan, K.L., Liu, P.-H., Chow, P.D.
Zdroj: 1991 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices & Circuits; 1991, p455-460, 6p
Databáze: Complementary Index