High gain W-band InGaAs-InAlAs-InP HEMTs for low noise W-band applications.
Autor: | Streit, D.C., Tan, K.L., Liu, P.-H., Chow, P.D. |
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Zdroj: | 1991 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices & Circuits; 1991, p455-460, 6p |
Databáze: | Complementary Index |
Externí odkaz: |