A 2ns Cycle, 4ns Access 512kb CMOS ECL SRAM.

Autor: Chappell, T.I., Chappell, B.A., Schuster, S.E., Allan, J.W., Kepner, S.P., Joshi, R.V., French, R.L.
Zdroj: 1991 IEEE International Solid-State Circuits Conference Digest of Technical Papers; 1991, p50-288, 239p
Databáze: Complementary Index